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SEMICONDUCTORS AND SEMIMETALS VOLUME 7 Applications and Devices Part B
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SEMICONDUCTORS AND SEMIMETALS Edited by R. K. WILLARDSON BPLL A N D HOWFLL t l E C I H O N I C MATFKIALS DIVISION PASADENA. CALIFORNIA
ALBERT C. BEER BATTELLE MEMORIAL INSTITUTE COLUMBUS LABORATORILS
COLUMBUS. OHIO
VOLUME 7 Applications and Devices Part B
1971
@
ACADEMIC PRESS
New York and London
COPYRIGHT 0 1971, BY ACADEMIC PRESS, WC. ALL RIGHTS RESERVED NO PART OF THIS BOOK MAY BE REPRODUCED IN ANY FORM, BY PHOTOSTAT, MICROFILM, RETRIEVAL SYSTEM, OR ANY OTHER MEANS, WITHOUT WRI7TEN PERMISSION FROM THE PUBLISHERS.
ACADEMIC PRESS, INC.
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United Kingdom Edition published by ACADEMIC PRESS, INC. (LONDON) LTD. Berkeley Square House, London W1X 6BA
LIBRARY OF CONGRESS CATALOG CARDNUMBER: 65-26048
PRINTED IN THE UNITED STATES OF AMERICA
Contents LISTOF CONTRIBUTORS. . PREFACE . . . . . CONTENTS OF PREVIOUS VOLUMES .
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DIODES Chapter 7 IMPATT Diodes T. Misawa Introduction . . . . . . , . . Dynamic Negative Resistance in p n Junction in Breakdown . Fundamental Phenomena and Mathematical Formulation . Analysis of Electrical Characteristics . . . . Design Considerations . . . VI. Diode Fabrication . . . . . . . . VII. Observed Electrical Characteristics . . . . . VIII. Conclusions . . . . . . . Appendix A. DC Equations and Numerical Solution . . Appendix B. Small-Signal AC Solution . . . . Appendix C. Addenda to Numerical Analysis of Large-Signal Read Diode . . . . . . Appendix D. Theory of TRAPATT Mode of Operation . List of Symbols . . . . . . 1. 11. 111. IV. V.
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Operation of
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Chapter 8 Tunnel Diodes H . C . Okean 1. Introduction . . . . . . 11. The Physics of Tunnel Diode Operation . 111. Principles of Tunnel Diode Fabrication . . . . . . IV. Terminal Properties of Tunnel Diodes . V. Experimental Characterization of Tunnel Diodes VI. Tunnel Diode Applications in Sinusoidal Circuits . VII. Tunnel Diode Applications in Pulse and Digital Circuits VIII. Present and Future Role of Tunnel Diodes . . V
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CONTENTS
Chapter 9 Silicon Carbide Junction Devices Robert B. Campbell and Hung-Chi Chang 1. Introduction . . . . . . 11. Silicon Carbide as a Semiconductor Material
DeviceTechniques . Silicon Carbide Power Diodes p-n Junction Detectors . Active Devices . . Irradiation Effects . . Luminescent Diodes . Summary . . . X. Addendum . . .
111. IV. V. VI. VII. VIII. 1X.
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