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SEMICONDUCTORS AND SEMIMETALS VOLUME 7 Applications and Devices Part B This Page Intentionally Left Blank SEMICONDUCTORS AND SEMIMETALS Edited by R. K. WILLARDSON BPLL A N D HOWFLL t l E C I H O N I C MATFKIALS DIVISION PASADENA. CALIFORNIA ALBERT C. BEER BATTELLE MEMORIAL INSTITUTE COLUMBUS LABORATORILS COLUMBUS. OHIO VOLUME 7 Applications and Devices Part B 1971 @ ACADEMIC PRESS New York and London COPYRIGHT 0 1971, BY ACADEMIC PRESS, WC. ALL RIGHTS RESERVED NO PART OF THIS BOOK MAY BE REPRODUCED IN ANY FORM, BY PHOTOSTAT, MICROFILM, RETRIEVAL SYSTEM, OR ANY OTHER MEANS, WITHOUT WRI7TEN PERMISSION FROM THE PUBLISHERS. ACADEMIC PRESS, INC. 111 Fifth Avenue, New York, New York 10003 United Kingdom Edition published by ACADEMIC PRESS, INC. (LONDON) LTD. Berkeley Square House, London W1X 6BA LIBRARY OF CONGRESS CATALOG CARDNUMBER: 65-26048 PRINTED IN THE UNITED STATES OF AMERICA Contents LISTOF CONTRIBUTORS. . PREFACE . . . . . CONTENTS OF PREVIOUS VOLUMES . . . . . . . . . . . . . . . . . . . . . . . 372 vii ix xi DIODES Chapter 7 IMPATT Diodes T. Misawa Introduction . . . . . . , . . Dynamic Negative Resistance in p n Junction in Breakdown . Fundamental Phenomena and Mathematical Formulation . Analysis of Electrical Characteristics . . . . Design Considerations . . . VI. Diode Fabrication . . . . . . . . VII. Observed Electrical Characteristics . . . . . VIII. Conclusions . . . . . . . Appendix A. DC Equations and Numerical Solution . . Appendix B. Small-Signal AC Solution . . . . Appendix C. Addenda to Numerical Analysis of Large-Signal Read Diode . . . . . . Appendix D. Theory of TRAPATT Mode of Operation . List of Symbols . . . . . . 1. 11. 111. IV. V. . 372 . . . . . . 377 . . . 429 . . . . . . 382 442 . . . 451 . 461 . 462 . . . . 463 Operation of . 464 . 466 . . . . 47 I Chapter 8 Tunnel Diodes H . C . Okean 1. Introduction . . . . . . 11. The Physics of Tunnel Diode Operation . 111. Principles of Tunnel Diode Fabrication . . . . . . IV. Terminal Properties of Tunnel Diodes . V. Experimental Characterization of Tunnel Diodes VI. Tunnel Diode Applications in Sinusoidal Circuits . VII. Tunnel Diode Applications in Pulse and Digital Circuits VIII. Present and Future Role of Tunnel Diodes . . V . . . . , . . 474 . 415 . . . . . . . . . . . . . . . . . . 501 515 . 534 . 543 . 602 . 616 vi CONTENTS Chapter 9 Silicon Carbide Junction Devices Robert B. Campbell and Hung-Chi Chang 1. Introduction . . . . . . 11. Silicon Carbide as a Semiconductor Material DeviceTechniques . Silicon Carbide Power Diodes p-n Junction Detectors . Active Devices . . Irradiation Effects . . Luminescent Diodes . Summary . . . X. Addendum . . . 111. IV. V. VI. VII. VIII. 1X. . . . . . . . . . . . . . . . . 625 . 626 . 634 . . . . . . . . ,642 . . . . . . . . .