High-power Ion Beam Sources For Semiconductors Technologies

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Institute of Electrical and Electronics Engineers (IEEE). KORUS Physics. 2001 0-7803-7008-2/01 p.366-370In this report two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP units. They generate ion beams with ion energies of up to 500 keV; puse duration is 20-200 and 50 ns respectively. There are two operations modes to which MUK and TEMP are designated respectively. The first one is heavy ion implantation, beam parametrs are as follows: beam composition can be varied from a range of H+, Cn+, Aln+, Mgn+, Fen+, Wn+, etc.; current density from1 to 20 A/cm2 per pulse; total energy flux up to 20 J. And the second one which is used mainly for energetic influence application has the following parametrs: beam composition is mixed H+ and Cn+ ions; current density 40-200 A/cm2 per pulse; total energy flux 0,3-0,5 kJ. The sources can be provided with various diode systems. They can be applied in material research and semiconductor's technology.

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