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Solutions Manual to Accompany SEMICONDUCTOR DEVICES Physics and Technology 2nd Edition S. M. SZE UMC Chair Professor National Chiao Tung University National Nano Device Laboratories Hsinchu, Taiwan John Wiley and Sons, Inc New York. Chicester / Weinheim / Brisband / Singapore / Toronto 1 Contents Ch.1 Introduction--------------------------------------------------------------------- 0 Ch.2 Energy Bands and Carrier Concentration -------------------------------------- 1 Ch.3 Carrier Transport Phenomena -------------------------------------------------- 7 Ch.4 p-n Junction -------------------------------------------------------------------- 16 Ch.5 Bipolar Transistor and Related Devices---------------------------------------- 32 Ch.6 MOSFET and Related Devices------------------------------------------------- 48 Ch.7 MESFET and Related Devices ------------------------------------------------- 60 Ch.8 Microwave Diode, Quantum-Effect and Hot-Electron Devices --------------- 68 Ch.9 Photonic Devices ------------------------------------------------------------- 73 Ch.10 Crystal Growth and Epitaxy--------------------------------------------------- 83 Ch.11 Film Formation---------------------------------------------------------------- 92 Ch.12 Lithography and Etching ------------------------------------------------------ 99 Ch.13 Impurity Doping--------------------------------------------------------------- 105 Ch.14 Integrated Devices------------------------------------------------------------- 113 0 CHAPTER 2 1. (a) From Fig. 11a, the atom at the center of the cube is surround by four equidistant nearest neighbors that lie at the corners of a tetrahedron. Therefore the distance between nearest neighbors in silicon (a = 5.43 Å) is 1/2 [(a/2)2 + ( 2 a /2)2 ]1/2 = 3a /4 = 2.35 Å. (b) For the (100) plane, there are two atoms (one central atom and 4