Ion Implantation And Synthesis Of Materials

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E-Book Overview

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

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Ion Implantation and Synthesis of Materials M. Nastasi J.W. Mayer Ion Implantation and Synthesis of Materials With 131 Figures and 10 Tables 123 Michael Nastasi, PhD Laboratory Fellow and Team Leader Ion-Solid Interaction and Interface Engineering Team Los Alamos National Laboratory, MS-K771 Los Alamos NM 87545, USA E-mail: [email protected] James W. Mayer, PhD Center for Solid State Science Arizona State University Tempe, AZ, 85287-1704, USA E-mail: [email protected] Library of Congress Control Number: 2006930120 ISBN-10 3-540-23674-0 Springer Berlin Heidelberg New York ISBN-13 978-3-540-23674-0 Springer Berlin Heidelberg New York This work is subject to copyright. All rights are reserved, whe