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SEMICONDUCTORS A N D SEMIMETALS VOLUME 12 Infrared Detectors I1 This Page Intentionally Left Blank SEMICONDUCTORS A N D SEMIMETALS Editc>dh?' R . K . WILLARDSON ALBERT C. BEER BATTEL-LE M E M O R I A I I N S l I l t ’ r k ( ' 0 1 IMHI’S l . A B O K A I O H I l ~ ( ’ 0 1 LMBIIC. OHIO VOLUME 12 Infrared Detectors I I 1977 COPYRIGHT 0 1977, BY ACADEMIC PRESS, INC. ALL RIGHTS RESERVED. NO PART OF THIS PUBLICATION MAY BE REPRODUCED OR TRANSMITTED IN ANY FORM OR BY ANY MEANS, ELECTRONIC OR MECHANICAL, INCLUDING PHOTOCOPY, RECORDING, OR ANY INFORMATION STORAGE AND RETRIEVAL SYSTEM, WITHOUT PERMISSION IN WRITING FROM THE PUBLISHER. ACADEMIC PRESS, INC. 111 Fifth Avmue. New York, New York lo003 United Kingdom Edition published by ACADEMIC PRESS, INC. (LONDON) LTD. 24/28 Oval Road. London NW1 Library of Congress Cataloging n i Publication Data ed. Willardson, Robert K Semiconductors and semimetals. CONTENTS: v. Physics of 111-V compounds.-v. 3. Optic properties of 111-V compounds.-v. 5. Infrared detectors. [etc.] 1. Semiconductors. 2. Semimetals. 11. Title. Albert C., joint ed. Qc610.92.W54 537.6'22 65-26048 ISBN: 0-12-752112-7 (v.12) PRINTED IN THE UNITED STATES OF AMERICA I. Beer, Con tents Ltsr OF CONTRIBUTORS . . PREFACE CONTENTS OF PREL'IOLIS VOLUMES . Chapter 1 H'. L . . . . . . . . . . ix xi xiii D. A l ~ ~ i ~ i . i ( /mil i i i , R . F. Potrrr Ei.sciiiiim. J . 1. Introduction . . . . . I . . . . . . 2 5 . . Measurement of Detector Parameters Calculations of Performance h r Specific Conditions Current State-of-the-Art Photodelectors. Detectors in Advance of the Statc-of-the-Art . . . . List of Symbols . Chapter 7 . Operational Characteristics of Infrared Photodetectors 11. Detector Parameters I l l . Figures of Merit . IV. V. VI. V11. . . . . . . . 8 16 '3 34 38 Impurity Germanium and Silicon Infrared Detectors P c w R . Brtrit I . Introduction 11. Impurities in Germanium and Silicon 111. Impurity Photoconductivity IV. Device Fabrication . . . . . . V . Operating Characteristics . VI. Conclusions and Anticipated Future Developments . . . . . Chapter 3 , 39 42 53 77 95 140 . . 143 147 . . . lnSb Submillimeter Photoconductive Detectors E. H . Pirrliij. I . Physical Principles . 11. Description of Detector V vi CONTENTS 111. Performance of Detector . . . . . . . IV. Applications and Future Developments . . . . . Appendix. Amplifiers for Use with the InSb Submillimeter Detector Addendum. . . . . . . . . . . . . . . . . . . . . . . 169 150 163 164 166 Chapter 4 Far-Infrared Photoconductivity in High Purity GaAs G . E. Stillman. C . M . Wolfe, and J . 0 . Dimmock 1. General Introduction 11. Material . . 111. Photoconductivity IV. Detector Performance V. Summary . . . . . . . . . . . . . . . . . . . . . . . . . . 176 . . . . . . . . 208 . . . . . . . . . . . . . . . . . . ,262 .288 . . . . <