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This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of ZnO materials and devices. Following an introduction, the authors look at the general properties of ZnO, as well as its growth, optical processes, doping and ZnO-based dilute magnetic semiconductors. Concluding sections treat bandgap engineering, processing and ZnO nanostructures and nanodevices. Of interest to device engineers, physicists, and semiconductor and solid state scientists in general.
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¨ zgu¨r ¨ mit O Hadis Morkoc¸ and U Zinc Oxide
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Hadis Morkoç and Ümit Özgür
Zinc Oxide Fundamentals, Materials and Device Technology
The Authors Prof. Dr. Hadis Morkoç Virginia Commonwealth University Dept. of Electrical Engineering Richmond, VA USA Ümit Özgür Virginia Commonwealth University Dept. of Electrical Engineering Richmond, VA USA
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Preface The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60 meV) that could lead to lasing action based on exciton recombination and possibly polariton/exciton interaction even above room temperature. The motivation for this book stems from the applications of ZnO in potential optical devices, transparent ohmic contacts, light extraction enhancement structures for GaN-based light-emitting diodes (LEDs), transparent thin-film transistors, transducers, and so on, for which ZnO is well suited. We should mention that even though research focusing on ZnO goes back to many decades, the renewed interest is fuelled by the availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transition metals, both of which remain controversial. The lattice parameter studies date back to 1935 [1], vibrational properties were studied by Raman scattering in 1966 [2], detailed optical properties were investigated in 1954 [3], and its growth by chemical vapor transport was attained in 1970 [4]. In terms of devices, Au Schottky barriers were f