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Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.
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PHYSICS OF SEMICONDUCTOR DEVICES
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PHYSICS OF SEMICONDUCTOR DEVICES by
J. P. Colinge Department of Electrical and Computer Engineering University of California, Davis C. A. Colinge Department of Electrical and Electronic Engineering California State University
KLUWER ACADEMIC PUBLISHERS NEW YORK, BOSTON, DORDRECHT, LONDON, MOSCOW
eBook ISBN: Print ISBN:
0-306-47622-3 1-4020-7018-7
©2002 Kluwer Academic Publishers New York, Boston, Dordrecht, London, Moscow Print ©2002 Kluwer Academic Publishers Dordrecht All rights reserved No part of this eBook may be reproduced or transmitted in any form or by any means, electronic, mechanical, recording, or otherwise, without written consent from the Publisher Created in the United States of America Visit Kluwer Online at: and Kluwer's eBookstore at:
http://kluweronline.com http://ebooks.kluweronline.com
CONTENTS
Preface
xi
1. Energy Band Theory 1.1. Electron in a crystal 1.1.1. Two examples of electron behavior 1.1.1.1. Free electron 1.1.1.2. The particle-in-a-box approach 1.1.2. Energy bands of a crystal (intuitive approach) 1.1.3. Krönig-Penney model 1.1.4. Valence band and conduction band 1.1.5. Parabolic band approximation 1.1.6. Concept of a hole 1.1.7. Effective mass of the electron in a crystal 1.1.8. Density of states in energy bands 1.2. Intrinsic semiconductor 1.3. Extrinsic semiconductor 1.3.1. Ionization of impurity atoms 1.3.2. Electron-hole equilibrium 1.3.3. Calculation of the Fermi Level 1.3.4. Degenerate semiconductor 1.4. Alignment of Fermi levels Important Equations Problems
1 1 1 1 3 6 7 15 19 20 21 25 29 31 34 35 37 39 40 43 44
2. Theory of Electrical Conduction 2.1. Drift of electrons in an electric field 2.2. Mobility 2.3. Drift current 2.3.1. Hall effect 2.4. Diffusion current 2.5. Drift-diffusion equations 2.5.1. Einstein relationships 2.6. Transport equations 2.7. Quasi-Fermi levels Important Equations Problems
51 51 53 56 57 59 60 60 62 65 67 68
vi
Contents 3. Generation/Recombination Phenomena 3.1. Introduction 3.2. Direct and indirect transitions 3.3. Generation/recombination centers 3.4. Excess carrier lifetime 3.5. SRH recombination 3.5.1. Minority carrier lifetime 3.6. Surface recombination Important Equations Problems
73 73 74 77 79 82 86 87 89 89
4. The PN Junction Diode 4.1. Introduction 4.2. Unbiased PN junction 4.3. Biased PN junction 4.4. Current-voltage characteristics 4.4.1. Derivation of the ideal diode model 4.4.2. Generation/recombination current 4.4.3. Junction breakdown 4.4.4. Short-base diode 4.5. PN junction capacitance 4.5.1. Transition capacitance 4.5.2. Diffusion capacitance 4.5.3. Charge storage and switching time 4.6. Models for the PN junction 4.6.1. Quasi-static, large-signal model 4.6.2. Small-signal, low-frequency model 4.6.3. Small-signal, high-frequency model 4.7. Solar cell 4.8. PiN diode Important Equations Problems
95 95 97 103 105 107 113 116 118 120 120 121