Transport In Metal-oxide-semiconductor Structures: Mobile Ions Effects On The Oxide Properties

Engineering Materials For further volumes: http://www.springer.com/series/4288 Hamid Bentarzi Transport in Metal-OxideSemiconductor Structures Mobile Ions Effects on the Oxide Properties 123 Hamid Bentarzi Dept. of Electrical and Electronic Engineering University of Boumerdes Freedom street 35000 Boumerdes Algeria e-mail: [email protected] ISSN 1612-1317 ISBN 978-3-642-16303-6 DOI 10.1007/978-3-642-16304-3 Springer Heidelberg Dordrecht London New York Ó Springer-Verlag Berlin Heidelberg 2011 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilm or in any other way, and storage in data banks. Duplication of this publication or parts thereof is permitted only under the provisions of the German Copyright Law of September 9, 1965, in its current version, and permission for use must always be obtained from Springer. Violations are liable to prosecution under the German Copyright Law. The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Cover design: deblik, Berlin Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Preface The present work deals with the study of the mobile ions in the silicon dioxide insulator, which has great importance because their presences affect significantly on the MOS structure characteristic. The subject is introduced with the necessary background concepts of MOS structure dealing with various aspects of the oxides and their charges. Besides, theoretical approaches to determine the density of mobile ions as well as their density-distribution along the oxide thickness are developed. In fact, three attempts have been discussed each makes use of different approaches. In the first attempt, the density of the mobile ions has been determined from experimental measurements using different techniques such as the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. In the second attempt, the theoretical approaches using empirical models or numerical approach for the mobile ions density distribution are described. In the last attempt, an analytical model of the mobile ions density distribution, which is based on physical concepts at equilibrium state and ionic current-voltage characteristic of MOS structure, is presented. The whole book is divided into 7 chapters. After introducing the subject in the first chapter, Chap. 2 deals with the background studies of the MOS structure ideal and non-ideal case. Chapter 3 presents method