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Power Electronics Semiconductor Devices
Edited by Robert Perret
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Power Electronics Semiconductor Devices
This page intentionally left blank
Power Electronics Semiconductor Devices
Edited by Robert Perret
First published in France in 2003 and 2005 by Hermes Science/Lavoisier entitled: Mise en œuvre des composants électroniques de puissance and Interrupteurs électroniques de puissance © LAVOISIER, 2003, 2005 First published in Great Britain and the United States in 2009 by ISTE Ltd and John Wiley & Sons, Inc. Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act 1988, this publication may only be reproduced, stored or transmitted, in any form or by any means, with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms and licenses issued by the CLA. Enquiries concerning reproduction outside these terms should be sent to the publishers at the undermentioned address: ISTE Ltd 27-37 St George’s Road London SW19 4EU UK
John Wiley & Sons, Inc. 111 River Street Hoboken, NJ 07030 USA
www.iste.co.uk
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© ISTE Ltd, 2009 The rights of Robert Perret to be identified as the author of this work have been asserted by him in accordance with the Copyright, Designs and Patents Act 1988. Library of Congress Cataloging-in-Publication Data Mise en œuvre des composants électroniques de puissance and Interrupteurs électroniques de puissance. English. Power electronics semiconductor devices / edited by Robert Perret. p. cm. Includes bibliographical references and index. ISBN 978-1-84821-064-6 1. Power electronics. 2. Power semiconductors. 3. Solid state electronics. I. Perret, Robert. II. Title. TK7881.15.M5713 2009 621.381'044--dc22 2009001021 British Library Cataloguing-in-Publication Data A CIP record for this book is available from the British Library ISBN: 978-1-84821-064-6 Printed and bound in Great Britain by CPI Antony Rowe, Chippenham and Eastbourne.
Table of Contents
Preface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
xi
Chapter 1. Power MOSFET Transistors . . . . . . . . . . . . . . . . . . . . . . Pierre ALOÏSI
1
1.1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2. Power MOSFET technologies . . . . . . . . . . . . . . . . . . . . . 1.2.1. Diffusion process . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2.2. Physical and structural MOS parameters . . . . . . . . . . . . 1.2.3. Permanent sustaining current . . . . . . . . . . . . . . . . . . . 1.3. Mechanism of power MOSFET operation. . . . . . . . . . . . . . 1.3.1. Basic principle . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3.2. Electron injection . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3.3. Static operation . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3.4. Dynamic operation . . . . . . . . . . . . . . . . . . . . . . . . . 1.4. Power MOSFET main characteristics . . . . . . . . . . . . . . . . 1.5. Switching cycle with an inductive load . . . . . . . . . . . . . . . 1.5.1. Switch-on study . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5.2.Switch-off study . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6. Characteristic variations due to MOSFET temperature changes . 1.7. Over-constrained operations . . . . . . . . . . . . . . . . . . . . . . 1.7.1. Overvoltage on the gate . . . . . . . . . . . . . . . . . . . . . . 1.7.2. Over-current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7.3. Avalanche sustaining. . . . . . . . . . . . . . . . . . . . . . . . 1.7.4. Use of the body diode . . . . . . . . . . . . . .