E-Book Overview
This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Pl? is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
E-Book Content
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MODELING AND CHARACTERIZATION OF RF AND MICROWAVE POWER FETS
This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification, and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years’ device modeling experience in LDMOS and III–V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III–V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. P e t e r H . A a e n is Modeling Group Manager; J a i m e A . P l a´ is Design Organization Manager; and J o h n Wo o d is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
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The Cambridge RF and Microwave Engineering Series Series Editor Steve C. Cripps, Hywave Associates Peter Aaen, Jaime Pl´a and John Wood, Modeling and Characterization of RF and Microwave Power FETs Dominique Schreurs et al., RF Power Amplifier Behavioral Modeling Sorin Voinigescu and Timothy Dickson, High-Frequency Integrated Circuits J. Stephenson Kenney, RF Power Amplifier Design and Linearization Allen Podell and Sudipto Chakraborty, Practical Radio Design Techniques Paul Young, RF and Microwave Networks: Measurement and Analysis Dominique Schreurs, Microwave Techniques for Microelectronics
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