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SOLID STATE PHYSICS VOLUME 11 This Page Intentionally Left Blank SOLID STATE PHYSICS Advances in Research and Applications Editors FREDERICK SEITZ DAVID TURNBULL Department of Physics University of Illinois Urbana, Illinois General Electric Research Laboratory Schenectady, New York VOLUME 11 I960 AN A C A D E M I C PRESS REPLICA REPRINT ACADEMIC PRESS A Subsidiary of Harcourt Brace Jovanovich. Publishers N ~ Y Wo r k London Toron’to Sydney San Francisco This is an Academic Press Replica Reprint reproduced directly from the pages of a title for which type, plates, or film no longer exist. Although not up to the standards of the original, this method of reproduction makes it possible to provide copies of books which otherwise would be out of print. COPYRIGHT 6 1960, BY ACADEMIC PRESS, INC. ALL RIGHTS RESERVED. NO PART O F THIS PUBLICATION MAY BE REPRODUCED OR TRANSMITTED IN ANY FORM OR BY ANY MEANS, ELECTRONIC OR MECHANICAL, INCLUDING PHOTOCOPY, RECORDING, OR ANY INFORMATION STORAGE AND RETRIEVAL SYSTEM, WITHOUT PERMISSION IN WRITING FROM T H E PUBLISHER. ACADEMIC PRESS, INC. 111 Fifth Avenue, New York. New York 10003 United Kingdom Edition published by ACADEMIC PRESS, INC. (LONDON) LTD. 24/20 Oval Road, London NWI LIBRARY OF CONGRESS CATALOG CARD NUMBER:55-12200 PRINTED IN THE UNITED STATES O F AMERICA 808182 9 8 7 6 5 4 3 Contributors to Volume i t RICHARD H . BUBE,RCA Laboratories, Princeton, New Jersey G.A. BUSCH, Laboratoriumfur Festkhperphyaik, Eidgenbs8ische Technische Hochschule, Zurich, Switzerland R. KERN,Lmborcrton’um fur Festkhperphysik, Eidgenbssi8che Technische Hoehchule, Zurich, Switzerland ROBERTw. KEYEB, Research hboratin’ies, Westinghouse Electric COTporation, Pittsburgh, Pennqlvania BENJAMIN LNC,Lincoln Laboratmy, Massachusetts InatitUte of Technology, Lexington, Massachusetts JOHNG . MAVROIDEB, Lincoln Laboratory, Massachwetk Inditute of Technology, Lezingkm, Maamchwtk c. A. SWENBON, Institute for Atom& Research and Department of Physice, Iowa Slale University, Ames, Iowa V This Page Intentionally Left Blank Preface Two of the articles in the present volume carry forward the coverage in this series of materials that have been of especial interest in solid state studies. One, by Busch and Kern, treats the preparation and properties of gray tin, which is of interest as an elemental semiconductor. In the other, by Bube, important aspects of the behavior of imperfections in cadmium sulfide type materials are discussed. The coverage of semiconductor behavior is continued in the article by Keyes in which the effect of elmtic deformation on electrical properties of semiconductors is reviewed. Two fields that have become especially prominent recently in solid state studies are reviewed in the other two articles of this volume. One is “Physics at High Pressure, ” reviewed by Swenson, and the other is “Cyclotron Resonance,” reviewed by Lax and Mavroides. Also included in this volume is a cumulative index of the first ten volumes of the series. This index is not a detailed one but is rather a topical index constructed from the outlines of the articles. FREDERICK SEITZ DAVIDTURNBULL June, 1960 Vii This Page Intentionally Left Blank Contents Contributors to Volume 11.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Preface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii Contents of Previous Volumes.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .